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| SI1450DH New Product Vishay Siliconix N-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.047 at VGS = 4.5 V 8 0.051 at VGS = 2.5 V 0.058 at VGS = 1.8 V 0.069 at VGS = 1.5 V ID (A)a 4.0a 4.0a 4.0 4.0 a a FEATURES Qg (Typ) * TrenchFET(R) Power MOSFET: 1.5 V Rated * 100 % Rg Tested RoHS 4.24 nC APPLICATIONS COMPLIANT * Load Switch for Portable Applications - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Space Savings SOT-363 SC-70 (6-LEADS) D D 1 6 D Marking Code AH XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: SI1450DH-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET D 2 5 D G G 3 4 S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit 8 5 6.04a 4.8a 4.53a 3.62a 15 2.3 1.3c 2.78 1.78 1.56b, c 1.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS Parameter t 5 sec Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 C/W. Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit C/W Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 1 SI1450DH Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.0 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.0 A VGS = 1.8 V, ID = 4.0 A VGS = 1.5 V, ID = 1.28 A Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 2.6 A, di/dt = 100 A/s, TJ = 25 C IS = 2.6 A, VGS = 0 V 0.8 14.3 3.6 6.8 7.5 TC = 25 C VDD = 4 V, RL = 1.11 ID 3.6 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 4 V, VGS = 5 V, ID = 4.0 A VDS = 4 V, VGS = 4.5 V, ID = 4.0 A VDS = 4 V, VGS = 0 V, f = 1 MHz VDS = 4 V, ID = 4.0 A Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 2.6 15 1.2 21.45 5.4 A V ns nC ns 535 120 61 4.7 4.24 1.2 0.810 7.3 8 73 18 5 11 12 110 27 7.5 ns 7.05 6.4 nC pF 15 0.039 0.042 0.048 0.053 15.5 0.047 0.051 0.058 0.069 S 0.3 8 8.32 - 2.7 1 100 1 10 V mV/C V ns A A Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 SI1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 15 25 C, unless noted 3 I D - Drain Current (A) V GS = 5 thru 2 V 9 V GS = 1.5 V 6 I D - Drain Current (A) 12 2 TC = 125 C 1 TC = 25 C TC = - 55 C 3 V GS = 1 V 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 VGS = 1.5 V rDS(on) - On-Resistance ( ) 0.08 VGS = 1.5 V C - Capacitance (pF) 600 800 Transfer Characteristics Ciss 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 400 200 Coss 0.00 0 3 6 9 12 15 0 0 Crss 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) rDS(on) vs. Drain Current 5 ID = 4.4 A V GS - Gate-to-Source Voltage (V) 4 rDS(on) - On-Resistance (Normalized) VGS = 6.4 V 3 VDS = 4 V 1.4 1.6 Capacitance VGS = 4.5 V ID = 4.6 A VGS = 2.5 V, ID = 4.4 A VGS = 1.8 V, ID = 4.25 A VGS = 1.5 V 1.0 ID = 1.2 A 1.2 2 1 0.8 0 0 2 3 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 74275 S-62079-Rev. A, 23-Oct-06 On-Resistance vs. Junction Temperature www.vishay.com 3 SI1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 10 rDS(on) - Drain-to-Source On-Resistance () 0.08 ID = 4.4 A 0.06 TA = 125 C TJ = 150 C I S - Source Current (A) 1 0.04 TJ = 25 C 0.1 TA = 25 C 0.02 0.01 0 0.4 0.6 0.8 0.2 VSD - Source-to-Drain Voltage (V) 1 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp 0.8 30 25 ID = 250 A Power (W) rDS(on) vs. VGS vs. Temperature 0.7 0.6 VGS(th) (V) 20 0.5 15 0.4 10 0.3 5 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 *Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s dc 0.1 Single Pulse Power 0.01 TA = 25 C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified BVDSS Limited Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 SI1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 8 3.6 3.2 6 ID - Drain Current (A) 2.8 Power Dissipation (W) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 4 Package Limited 2 TC - Case Temperature (C) T C - Case Temperature ( C) Current Derating* 2 1 Duty Cycle = 0.5 Power Derating Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 5 SI1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74275. www.vishay.com 6 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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